- 电子复合
- electron: n. 【物理学】电子。 the electron bea ...
- electron hole recombination: 电子 空穴复合; 电子空穴复合
- electron ion recombination: 电子 离子复合; 电子离子复合
- electron-hole recombination: 电子空穴复合
- ion electron recombination: 离子电子再化合
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electron recombination中文什么意思
- 电子复合
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例句与用法
- The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed , which was a possible alternative to achieve color display . 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated . when the balq3 dopant concentration was about 25 mol % , a high performance devcie with luminous efficiency of 1 . 0 lm / w , the peak of emission spectrum at 440 nm , the cie coordinate at ( 0 . 18 , 0 . 15 ) , and half lifetime of unencapsulated device about 950 hrs was achieved
导致本现象的原因是由于各有机层电场强度的变化影响了空穴和电子的隧穿几率,从而导致载流子的复合区域发生改变而发出不同颜色的光; 3 )制备了结构为ito / npb / adn : balq3 / alq3 / mg : ag的蓝光oled ,空穴阻挡材料balq3的掺入显著影响了oled的光电性能,当balq3的掺杂浓度为25mol %时, oled的发光效率为1 . 0lm / w ,发光光谱的峰值为440nm ,色纯度为( 0 . 18 , 0 . 15 ) ,未封装器件的半衰期达到了950小时; 4 )在蓝光材料adn中掺杂npb 、 balq3和tbp三种材料时,不仅改善了器件的发光亮度和色纯度,而且提高了器件的发光效率和寿命。